FDP12N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Pbfree Code :

yes

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation-Max :

165W Tc

Pulsed Drain Current-Max (IDM) :

46A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Avalanche Energy Rating (Eas) :

456 mJ

Continuous Drain Current (ID) :

11.5A

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Turn On Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 25V

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

50ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Fall Time (Typ) :

30 ns

FET Type :

N-Channel

Factory Lead Time :

9 Weeks

Mounting Type :

Through Hole

Power Dissipation :

165W

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Number of Elements :

1

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Turn-Off Delay Time :

45 ns

Lead Free :

Lead Free

Resistance :

650mOhm

Series :

UniFET™

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Published :

2013

Weight :

1.8g