FDP18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

500V

Rds On (Max) @ Id, Vgs :

265m Ω @ 9A, 10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Length :

10.1mm

Additional Feature :

FAST SWITCHING

Height :

9.4mm

Pbfree Code :

yes

Vgs (Max) :

±30V

Power Dissipation-Max :

235W Tc

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

9 Weeks

Number of Elements :

1

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Turn-Off Delay Time :

95 ns

Threshold Voltage :

5V

Avalanche Energy Rating (Eas) :

945 mJ

Current Rating :

18A

Continuous Drain Current (ID) :

18A

Resistance :

265mOhm

Number of Terminations :

3

Lead Free :

Lead Free

Series :

UniFET™

Voltage - Rated DC :

500V

Fall Time (Typ) :

90 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current :

18A

Turn On Delay Time :

55 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Mounting Type :

Through Hole

Contact Plating :

Tin

Number of Pins :

3

Width :

4.7mm

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Rise Time :

165ns

Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Power Dissipation :

235W

Element Configuration :

Single

Published :

2013

Transistor Application :

SWITCHING