FDP18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Factory Lead Time :

9 Weeks

Avalanche Energy Rating (Eas) :

945 mJ

Current :

18A

Package / Case :

TO-220-3

Pbfree Code :

yes

Turn On Delay Time :

55 ns

Published :

2013

Additional Feature :

FAST SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Series :

UniFET™

JESD-609 Code :

e3

Current Rating :

18A

Number of Pins :

3

REACH SVHC :

No SVHC

Power Dissipation-Max :

235W Tc

Rds On (Max) @ Id, Vgs :

265m Ω @ 9A, 10V

Power Dissipation :

235W

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

165ns

Transistor Application :

SWITCHING

Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

500V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

ECCN Code :

EAR99

Width :

4.7mm

Length :

10.1mm

Resistance :

265mOhm

Packaging :

Tube

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Fall Time (Typ) :

90 ns

Continuous Drain Current (ID) :

18A

Element Configuration :

Single

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

FET Type :

N-Channel

Turn-Off Delay Time :

95 ns

Transistor Element Material :

SILICON

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Height :

9.4mm

Operating Mode :

ENHANCEMENT MODE