FDP18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.1mm

Rise Time :

165ns

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Fall Time (Typ) :

90 ns

Additional Feature :

FAST SWITCHING

JESD-609 Code :

e3

Number of Terminations :

3

Turn-Off Delay Time :

95 ns

Transistor Element Material :

SILICON

Resistance :

265mOhm

Voltage - Rated DC :

500V

Series :

UniFET™

Power Dissipation-Max :

235W Tc

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

265m Ω @ 9A, 10V

Threshold Voltage :

5V

FET Type :

N-Channel

ECCN Code :

EAR99

Power Dissipation :

235W

Number of Pins :

3

Package / Case :

TO-220-3

Current Rating :

18A

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Published :

2013

Contact Plating :

Tin

Mounting Type :

Through Hole

Radiation Hardening :

No

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Voltage :

500V

Pbfree Code :

yes

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

18A

Drain to Source Breakdown Voltage :

500V

Height :

9.4mm

Current :

18A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Factory Lead Time :

9 Weeks

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

945 mJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Turn On Delay Time :

55 ns

Width :

4.7mm