FDP18N20F
- Mfr.Part #
- FDP18N20F
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 18,300
- In Stock :
- 18,300
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.8g
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 50ns
- Power Dissipation-Max :
- 100W Tc
- Height :
- 16.3mm
- Continuous Drain Current (ID) :
- 18A
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Series :
- UniFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Resistance :
- 145mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 40 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 145m Ω @ 9A, 10V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 16 ns
- Published :
- 2013
- Element Configuration :
- Single
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Width :
- 4.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 72A
- FET Type :
- N-Channel
- Power Dissipation :
- 100W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 50 ns
- Length :
- 10.67mm
- Datasheets
- FDP18N20F
FDP18N20F Documents

N-Channel Tube 145m Ω @ 9A, 10V ±30V 1180pF @ 25V 26nC @ 10V TO-220-3
FDP18N20F Description
The high voltage UniFETTM MOSFET family from Fairchild Semiconductor is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Lifetime control has improved the UniFET FRFET? MOSFET's body diodes reverse recovery performance. While typical planar MOSFETs have over 200nsec and 4.5V/nsec, respectively, it has less than 10Onsec and reverse dv/dt immunity. Therefore, in some cases where the performance of the MOSFET's body diode is crucial, it can eliminate an extra component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDP18N20F Features
? Minimal Gate Fee (Typ. 20 nC)
? Low Crss FTP (24pF)
? Only Avalanche-certified products
? RoHS conformant
FDP18N20F Applications
? LCD or LED TV
? Consumer electronics
? Lighting
? A backup power supply
? Power Supply, AC-DC
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