FDP18N20F

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

UniFET™

Height :

16.3mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

145m Ω @ 9A, 10V

Weight :

1.8g

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

40 ns

Rise Time :

50ns

Width :

4.7mm

Length :

10.67mm

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Power Dissipation :

100W

Turn-Off Delay Time :

50 ns

Package / Case :

TO-220-3

Turn On Delay Time :

16 ns

Packaging :

Tube

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

18A

Published :

2013

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

18A Tc

ECCN Code :

EAR99

Power Dissipation-Max :

100W Tc

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

72A

Resistance :

145mOhm

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified