FDP18N20F

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Mfr.Part #
FDP18N20F
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
18,300
In Stock :
18,300

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
1.8g
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Gate to Source Voltage (Vgs) :
30V
Rise Time :
50ns
Power Dissipation-Max :
100W Tc
Height :
16.3mm
Continuous Drain Current (ID) :
18A
JEDEC-95 Code :
TO-220AB
Lead Free :
Lead Free
Vgs (Max) :
±30V
Series :
UniFET™
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Number of Terminations :
3
Packaging :
Tube
Resistance :
145mOhm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
40 ns
Vgs(th) (Max) @ Id :
5V @ 250μA
Pbfree Code :
yes
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
145m Ω @ 9A, 10V
Transistor Application :
SWITCHING
Turn On Delay Time :
16 ns
Published :
2013
Element Configuration :
Single
Mount :
Through Hole
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Width :
4.7mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Drain to Source Breakdown Voltage :
200V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
72A
FET Type :
N-Channel
Power Dissipation :
100W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Factory Lead Time :
4 Weeks
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1180pF @ 25V
Number of Elements :
1
Package / Case :
TO-220-3
Turn-Off Delay Time :
50 ns
Length :
10.67mm
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP18N20F from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, FDP18N20F pinout, FDP18N20F datasheet PDF, FDP18N20F amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP18N20F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP18N20F


N-Channel Tube 145m Ω @ 9A, 10V ±30V 1180pF @ 25V 26nC @ 10V TO-220-3

FDP18N20F Description


The high voltage UniFETTM MOSFET family from Fairchild Semiconductor is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Lifetime control has improved the UniFET FRFET? MOSFET's body diodes reverse recovery performance. While typical planar MOSFETs have over 200nsec and 4.5V/nsec, respectively, it has less than 10Onsec and reverse dv/dt immunity. Therefore, in some cases where the performance of the MOSFET's body diode is crucial, it can eliminate an extra component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.



FDP18N20F Features


? Minimal Gate Fee (Typ. 20 nC)


? Low Crss FTP (24pF)


? Only Avalanche-certified products


? RoHS conformant



FDP18N20F Applications


? LCD or LED TV


? Consumer electronics


? Lighting


? A backup power supply


? Power Supply, AC-DC


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