FDP18N20F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

16 ns

Continuous Drain Current (ID) :

18A

Terminal Finish :

Tin (Sn)

Rise Time :

50ns

Transistor Element Material :

SILICON

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Power Dissipation :

100W

Element Configuration :

Single

JESD-609 Code :

e3

Series :

UniFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Published :

2013

FET Type :

N-Channel

Weight :

1.8g

Length :

10.67mm

Transistor Application :

SWITCHING

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

145m Ω @ 9A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

50 ns

Height :

16.3mm

Pulsed Drain Current-Max (IDM) :

72A

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Width :

4.7mm

Power Dissipation-Max :

100W Tc

JEDEC-95 Code :

TO-220AB

Resistance :

145mOhm

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

200V

Number of Elements :

1

Number of Terminations :

3

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Fall Time (Typ) :

40 ns

Packaging :

Tube

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Through Hole

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V