FDP16AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Package / Case :

TO-220-3

Weight :

1.8g

Turn-Off Delay Time :

28 ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Fall Time (Typ) :

30 ns

Power Dissipation-Max :

135W Tc

Radiation Hardening :

No

Turn On Delay Time :

8 ns

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Vgs (Max) :

±20V

Lead Free :

Lead Free

Rise Time :

82ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 58A, 10V

Length :

10.67mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

135W

Factory Lead Time :

9 Weeks

Mounting Type :

Through Hole

Contact Plating :

Tin

Continuous Drain Current (ID) :

9A

Number of Elements :

1

Width :

4.83mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

75V

Current - Continuous Drain (Id) @ 25°C :

9A Ta 58A Tc

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

1857pF @ 25V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

9A

Height :

9.4mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Packaging :

Tube

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Voltage - Rated DC :

75V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current Rating :

58A

JESD-609 Code :

e3

ECCN Code :

EAR99