FDP15N65

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

250W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

637 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

60A

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

650V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Series :

UniFET™

Surface Mount :

No

Drain-source On Resistance-Max :

0.44Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3.095pF @ 25V

Drain Current-Max (Abs) (ID) :

16A

Rds On (Max) @ Id, Vgs :

440m Ω @ 7.5A, 10V

Terminal Position :

Single

Additional Feature :

FAST SWITCHING

JEDEC-95 Code :

TO-220AB