FDP15N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Threshold Voltage :

3V

Pulsed Drain Current-Max (IDM) :

60A

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

400V

Power Dissipation-Max :

170W Tc

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Rise Time :

55ns

Continuous Drain Current (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 25V

Turn-Off Delay Time :

72 ns

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

170W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Length :

10.67mm

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

26 ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Resistance :

300mOhm

Published :

2007

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

300m Ω @ 7.5A, 10V

Transistor Application :

SWITCHING

Nominal Vgs :

3 V

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Width :

4.83mm

Number of Elements :

1

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Weight :

1.8g

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

UniFET™

Mount :

Through Hole

Height :

16.51mm

Fall Time (Typ) :

40 ns

Radiation Hardening :

No

Lead Free :

Lead Free