FDP150N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Continuous Drain Current (ID) :

57A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

2.5V

Rise Time :

164ns

ECCN Code :

EAR99

Width :

4.83mm

Packaging :

Tube

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

JESD-609 Code :

e3

Fall Time (Typ) :

83 ns

Length :

10.67mm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Vgs (Max) :

±20V

Height :

16.51mm

Resistance :

15mOhm

Number of Elements :

1

Turn-Off Delay Time :

86 ns

Number of Pins :

3

Lead Free :

Lead Free

Power Dissipation :

110W

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4760pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn On Delay Time :

47 ns

Weight :

1.8g

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

228A

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Series :

PowerTrench®

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

15m Ω @ 49A, 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

110W Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Radiation Hardening :

No

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3