FDP14AN06LA0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

2.9pF @ 25V

Drain-source On Resistance-Max :

0.012Ohm

JEDEC-95 Code :

TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

46 mJ

Package / Case :

TO-220-3

Series :

PowerTrench®

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tube

Surface Mount :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10A Ta 67A Tc

Drain to Source Voltage (Vdss) :

60V

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

10A

JESD-609 Code :

e3

Number of Elements :

1

Pin Count :

4

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 67A, 10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power Dissipation-Max :

125W Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Terminal Form :

Gull wing