FDP14AN06LA0
- Mfr.Part #
- FDP14AN06LA0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A/67A TO220-3
- Stock
- 14,481
- In Stock :
- 14,481
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Series :
- PowerTrench®
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- Unknown
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 11.6m Ω @ 67A, 10V
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 60V
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 60V
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.012Ohm
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.9pF @ 25V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-263AB
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 67A Tc
- Number of Elements :
- 1
- Power Dissipation-Max :
- 125W Tc
- Datasheets
- FDP14AN06LA0

N-Channel Tube 11.6m Ω @ 67A, 10V ±20V 2.9pF @ 25V 31nC @ 5V 60V TO-220-3
FDP14AN06LA0 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.9pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
FDP14AN06LA0 Features
the avalanche energy rating (Eas) is 46 mJ
a 60V drain to source voltage (Vdss)
FDP14AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDP14AN06LA0 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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