FDP14AN06LA0

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Mfr.Part #
FDP14AN06LA0
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 10A/67A TO220-3
Stock
14,481
In Stock :
14,481

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
Not Applicable
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Series :
PowerTrench®
Qualification Status :
COMMERCIAL
Case Connection :
DRAIN
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 5V
Terminal Position :
Single
Package / Case :
TO-220-3
JESD-30 Code :
R-PSSO-G2
Reach Compliance Code :
Unknown
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
11.6m Ω @ 67A, 10V
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
10A
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drain to Source Voltage (Vdss) :
60V
Pin Count :
4
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Finish :
MATTE TIN
Number of Terminations :
2
DS Breakdown Voltage-Min :
60V
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
FET Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.012Ohm
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2.9pF @ 25V
Mounting Type :
Through Hole
Pbfree Code :
yes
JEDEC-95 Code :
TO-263AB
Avalanche Energy Rating (Eas) :
46 mJ
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
10A Ta 67A Tc
Number of Elements :
1
Power Dissipation-Max :
125W Tc
Datasheets
FDP14AN06LA0
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP14AN06LA0 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, FDP14AN06LA0 pinout, FDP14AN06LA0 datasheet PDF, FDP14AN06LA0 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP14AN06LA0 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP14AN06LA0


N-Channel Tube 11.6m Ω @ 67A, 10V ±20V 2.9pF @ 25V 31nC @ 5V 60V TO-220-3

FDP14AN06LA0 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.9pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

FDP14AN06LA0 Features


the avalanche energy rating (Eas) is 46 mJ
a 60V drain to source voltage (Vdss)


FDP14AN06LA0 Applications


There are a lot of Rochester Electronics, LLC
FDP14AN06LA0 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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