FDP090N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Published :

2004

Pbfree Code :

yes

Transistor Application :

SWITCHING

Length :

10.67mm

Contact Plating :

Tin

Turn-Off Delay Time :

166 ns

Number of Pins :

3

Height :

16.51mm

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Series :

PowerTrench®

Mount :

Through Hole

Power Dissipation-Max :

208W Tc

Power Dissipation :

208W

JESD-609 Code :

e3

Continuous Drain Current (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

8225pF @ 25V

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Radiation Hardening :

No

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Terminations :

3

Nominal Vgs :

3.5 V

Width :

4.83mm

Number of Elements :

1

Weight :

1.8g

Turn On Delay Time :

107 ns

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.009Ohm

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Transistor Element Material :

SILICON

Fall Time (Typ) :

149 ns

Rise Time :

322ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

9m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-220-3

Packaging :

Tube

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)