FDP032N08

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Length :

10.1mm

Input Capacitance (Ciss) (Max) @ Vds :

15160pF @ 25V

Resistance :

3.2mOhm

Height :

15.38mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

230 ns

Rise Time :

191ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Threshold Voltage :

3.5V

Power Dissipation :

375W

Power Dissipation-Max :

375W Tc

Number of Terminations :

3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Fall Time (Typ) :

121 ns

Continuous Drain Current (ID) :

235A

Number of Pins :

3

Turn-Off Delay Time :

335 ns

Qualification Status :

Not Qualified

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Weight :

2.421g

Width :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

9 Weeks

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

940A

Drain to Source Breakdown Voltage :

75V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

ECCN Code :

EAR99

Packaging :

Tube

Published :

2004

Transistor Element Material :

SILICON