FDP030N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

9815pF @ 25V

Number of Elements :

1

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

231W Tc

Number of Pins :

3

JESD-609 Code :

e3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

772A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

33 ns

Lead Free :

Lead Free

Weight :

2.421g

Package / Case :

TO-220-3

Mount :

Through Hole

Power Dissipation :

231W

Vgs (Max) :

±20V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Continuous Drain Current (ID) :

193A

Factory Lead Time :

9 Weeks

Element Configuration :

Single

Turn-Off Delay Time :

54 ns

Pbfree Code :

yes

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Rise Time :

178ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Width :

4.7mm

Published :

2013

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Height :

15.38mm

Transistor Element Material :

SILICON

Turn On Delay Time :

39 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Length :

10.1mm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ