FDP030N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

178ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

33 ns

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Length :

10.1mm

Pulsed Drain Current-Max (IDM) :

772A

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Published :

2013

FET Type :

N-Channel

Factory Lead Time :

9 Weeks

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Height :

15.38mm

Turn On Delay Time :

39 ns

Number of Elements :

1

Element Configuration :

Single

Packaging :

Tube

Weight :

2.421g

Number of Terminations :

3

Width :

4.7mm

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pbfree Code :

yes

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Input Capacitance (Ciss) (Max) @ Vds :

9815pF @ 25V

Turn-Off Delay Time :

54 ns

Power Dissipation-Max :

231W Tc

Power Dissipation :

231W

Continuous Drain Current (ID) :

193A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Number of Pins :

3