FDP032N08
- Mfr.Part #
- FDP032N08
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,738
- In Stock :
- 3,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 15160pF @ 25V
- Threshold Voltage :
- 3.5V
- Factory Lead Time :
- 9 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 3.2mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 121 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 375W Tc
- Length :
- 10.1mm
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Height :
- 15.38mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 75A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Series :
- PowerTrench®
- Rise Time :
- 191ns
- Turn-Off Delay Time :
- 335 ns
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 940A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Width :
- 4.7mm
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2004
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Power Dissipation :
- 375W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Weight :
- 2.421g
- Drain to Source Breakdown Voltage :
- 75V
- Continuous Drain Current (ID) :
- 235A
- Turn On Delay Time :
- 230 ns
- Datasheets
- FDP032N08
FDP032N08 Documents

N-Channel Tube 3.2m Ω @ 75A, 10V ±20V 15160pF @ 25V 220nC @ 10V TO-220-3
FDP032N08 Description
FDP032N08 is made with Fairchild Semiconductor's innovative PowerTrench? technology, which is designed to reduce on-state resistance while preserving superior switching performance.
FDP032N08 Features
?RDS(on)= 2.5 mQ (Typ.) @ 1° V, Id = 75 A @ gs = 1° V
?Extremely Fast Switching Speed
?Affordable Gate Charge
?Extremely Low RDS with High Performance Trench Technology (on)
?Capacity to handle high power and cur rent
FDP032N08 Applications
?Automatic Rectification for ATX/Server/Telecom PSUs
?Protection Circuit for Batteries
?Uninterruptible Power Supplies and Motor Drives
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