FDP025N06
- Mfr.Part #
- FDP025N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 120A TO220-3
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 324ns
- Factory Lead Time :
- 9 Weeks
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 14885pF @ 25V
- Weight :
- 2.421g
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 3.5V
- Packaging :
- Tube
- Height :
- 15.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 75A, 10V
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 250 ns
- Number of Pins :
- 3
- Nominal Vgs :
- 3.5 V
- Element Configuration :
- Single
- Resistance :
- 2.5MOhm
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 395W
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 265A
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 226nC @ 10V
- Power Dissipation-Max :
- 395W Tc
- Turn-Off Delay Time :
- 348 ns
- FET Type :
- N-Channel
- Length :
- 9.9mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 134 ns
- Width :
- 4.5mm
- Mount :
- Through Hole
- Datasheets
- FDP025N06
FDP025N06 Documents

N-Channel Tube 2.5m Ω @ 75A, 10V ±20V 14885pF @ 25V 226nC @ 10V TO-220-3
FDP025N06 Description
This N-Channel MOSFET FDP025N06 is produced using Fairchild Semicon- ductor's advanced Power Trench process that has been tai lored to minimize the on-state resistance while maintaining superior switching perfomance.
FDP025N06 Features
·RDS(on)=1.9mΩ(Typ.)@VGs=10V , lD=75A
·Fast Switching Speed
·Low Gate Charge
·High Performance Trench Technologyfor ExtremelyLow RpS(on)
·High Power and Current Handling Capability·RoHS Compliant
FDP025N06 Applications
·Synchronous RectificationforATX/Server/Telecom PSU
·Battery Protection Circuit
·Motor Drives and Uninterruptible Power Supplies
·Renewable system
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