FDP025N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Weight :

2.421g

Power Dissipation-Max :

395W Tc

Width :

4.5mm

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 75A, 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Input Capacitance (Ciss) (Max) @ Vds :

14885pF @ 25V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

3.5 V

Fall Time (Typ) :

250 ns

Resistance :

2.5MOhm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

348 ns

FET Type :

N-Channel

Threshold Voltage :

3.5V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Continuous Drain Current (ID) :

265A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Length :

9.9mm

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

226nC @ 10V

Number of Terminations :

3

Power Dissipation :

395W

Transistor Application :

SWITCHING

Factory Lead Time :

9 Weeks

Mounting Type :

Through Hole

Rise Time :

324ns

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Pbfree Code :

yes

Turn On Delay Time :

134 ns

Terminal Finish :

Tin (Sn)

Number of Pins :

3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Height :

15.7mm

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3