FDP070AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

FET Type :

N-Channel

Number of Elements :

1

Number of Terminations :

3

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Drain-source On Resistance-Max :

0.007Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current Rating :

80A

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Power Dissipation-Max :

175W Tc

Turn-Off Delay Time :

27 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

15A Ta 80A Tc

Voltage - Rated DC :

60V

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

175W

Lead Free :

Lead Free

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

7m Ω @ 80A, 10V

JESD-609 Code :

e3

Fall Time (Typ) :

35 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

159ns

Mount :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Radiation Hardening :

No

Number of Pins :

3

Element Configuration :

Single

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB