FDP054N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Pbfree Code :

yes

Element Configuration :

Single

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

80 ns

Published :

2004

Height :

15.38mm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Element Material :

SILICON

Additional Feature :

ULTRA-LOW RESISTANCE

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Threshold Voltage :

3.5V

REACH SVHC :

No SVHC

Length :

10.1mm

Number of Elements :

1

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation-Max :

263W Tc

Fall Time (Typ) :

39 ns

Rise Time :

92ns

Continuous Drain Current (ID) :

120A

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

9 Weeks

Packaging :

Tube

Turn On Delay Time :

44 ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

263W

Gate Charge (Qg) (Max) @ Vgs :

203nC @ 10V

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Width :

4.7mm

Drain-source On Resistance-Max :

0.0055Ohm

Pulsed Drain Current-Max (IDM) :

576A

Vgs (Max) :

±20V

Weight :

2.421g

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

13280pF @ 25V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant