FDP054N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

92ns

Number of Terminations :

3

Length :

10.1mm

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Threshold Voltage :

3.5V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

203nC @ 10V

Fall Time (Typ) :

39 ns

REACH SVHC :

No SVHC

Turn On Delay Time :

44 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 75A, 10V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Height :

15.38mm

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

13280pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

263W Tc

Width :

4.7mm

Factory Lead Time :

9 Weeks

Power Dissipation :

263W

Packaging :

Tube

Turn-Off Delay Time :

80 ns

Pbfree Code :

yes

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

120A

Drain-source On Resistance-Max :

0.0055Ohm

JESD-609 Code :

e3

Series :

PowerTrench®

Element Configuration :

Single

Published :

2004

Pulsed Drain Current-Max (IDM) :

576A

Weight :

2.421g