FDP050AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A Ta 80A Tc

Lead Free :

Lead Free

Turn-Off Delay Time :

28 ns

Fall Time (Typ) :

29 ns

Weight :

1.8g

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

5m Ω @ 80A, 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Height :

20.4mm

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Voltage - Rated DC :

60V

Number of Terminations :

3

Width :

4.83mm

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Turn On Delay Time :

16 ns

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

245W Tc

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pbfree Code :

yes

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Current Rating :

80A

ECCN Code :

EAR99

Power Dissipation :

245W

Rise Time :

160ns

Mounting Type :

Through Hole

Resistance :

5mOhm

Vgs (Max) :

±20V

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JEDEC-95 Code :

TO-220AB

Length :

10.67mm

Max Junction Temperature (Tj) :

175°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Avalanche Energy Rating (Eas) :

470 mJ

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Element Configuration :

Single