FDP050AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

29 ns

Number of Pins :

3

Number of Elements :

1

Rise Time :

160ns

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

18A Ta 80A Tc

Turn On Delay Time :

16 ns

JESD-609 Code :

e3

Element Configuration :

Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Power Dissipation :

245W

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Current Rating :

80A

Max Junction Temperature (Tj) :

175°C

Power Dissipation-Max :

245W Tc

Series :

PowerTrench®

Voltage - Rated DC :

60V

Width :

4.83mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

6 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

80A

Height :

20.4mm

Packaging :

Tube

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

28 ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 80A, 10V

Mounting Type :

Through Hole

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

60V

Length :

10.67mm

Published :

2013

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

470 mJ

Case Connection :

DRAIN

Weight :

1.8g

Pbfree Code :

yes

Resistance :

5mOhm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant