FDP047N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Rise Time :

386ns

Pbfree Code :

yes

Weight :

2.421g

REACH SVHC :

No SVHC

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

164A

Turn-Off Delay Time :

344 ns

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3.5V

Turn On Delay Time :

174 ns

Height :

15.38mm

Input Capacitance (Ciss) (Max) @ Vds :

15265pF @ 25V

Power Dissipation-Max :

375W Tc

Factory Lead Time :

7 Weeks

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Radiation Hardening :

No

Mounting Type :

Through Hole

Published :

2013

Length :

10.1mm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 75A, 10V

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

656A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Fall Time (Typ) :

244 ns

Resistance :

4.7MOhm

Packaging :

Tube

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Width :

4.7mm

Power Dissipation :

375W

Vgs (Max) :

±20V