FDP047N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Continuous Drain Current (ID) :

164A

Width :

4.83mm

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

Pulsed Drain Current-Max (IDM) :

656A

Current - Continuous Drain (Id) @ 25°C :

164A Tc

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Factory Lead Time :

5 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Power Dissipation :

268W

Lead Free :

Lead Free

Number of Elements :

1

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

3.5 V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Published :

2004

Radiation Hardening :

No

Packaging :

Tube

Pbfree Code :

yes

Series :

PowerTrench®

Fall Time (Typ) :

114 ns

Package / Case :

TO-220-3

Rise Time :

147ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

220 ns

Power Dissipation-Max :

268W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

670 mJ

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.51mm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

75V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

100 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Resistance :

4.7MOhm

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

9415pF @ 25V

Length :

10.67mm

REACH SVHC :

No SVHC

JESD-609 Code :

e3

ECCN Code :

EAR99