FDP047AN08A0-F102
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- Mfr.Part #
- FDP047AN08A0-F102
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A TO220-3
- Stock
- 45,820
- In Stock ：
- 45,820
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Power Dissipation :
- 310W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Weight :
- 1.8g
- Packaging :
- Tube
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 80A
- Drain to Source Resistance :
- 4.7MOhm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Power Dissipation-Max :
- 310W Tc
- HTS Code :
- 8541.29.00.95
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 75V
- Datasheets
- FDP047AN08A0-F102
N-Channel Tube ±20V TO-220-3
FDP047AN08A0-F102 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 75V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 4.7mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
FDP047AN08A0-F102 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
single MOSFETs transistor is 4.7mOhm
FDP047AN08A0-F102 Applications
There are a lot of ON Semiconductor
FDP047AN08A0-F102 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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