FDP047AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

310W

REACH SVHC :

No SVHC

Number of Pins :

3

Fall Time (Typ) :

45 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

Length :

10.67mm

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

75V

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

310W Tc

Pbfree Code :

yes

Lead Free :

Lead Free

Weight :

1.8g

Avalanche Energy Rating (Eas) :

475 mJ

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

75V

Transistor Application :

SWITCHING

Rise Time :

88ns

Operating Temperature :

-55°C~175°C TJ

Current Rating :

80A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Turn-Off Delay Time :

40 ns

Number of Terminations :

3

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Contact Plating :

Tin

Height :

9.4mm

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

80A

JESD-609 Code :

e3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

15A Tc

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Packaging :

Tube

Mounting Type :

Through Hole

Vgs (Max) :

±20V

ECCN Code :

EAR99

FET Type :

N-Channel

Resistance :

4.7MOhm