FDP047AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Resistance :

4.7MOhm

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Length :

10.67mm

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Drain to Source Breakdown Voltage :

75V

Height :

9.4mm

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Fall Time (Typ) :

45 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power Dissipation-Max :

310W Tc

Turn-Off Delay Time :

40 ns

Avalanche Energy Rating (Eas) :

475 mJ

Current Rating :

80A

Number of Terminations :

3

Radiation Hardening :

No

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

JESD-609 Code :

e3

Number of Pins :

3

Contact Plating :

Tin

Transistor Application :

SWITCHING

Power Dissipation :

310W

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

88ns

FET Type :

N-Channel

Lead Free :

Lead Free

Voltage - Rated DC :

75V

Pbfree Code :

yes

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Width :

4.83mm

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Number of Elements :

1