FDP047AN08A0
- Mfr.Part #
- FDP047AN08A0
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 15A TO220-3
- Stock
- 9,076
- In Stock :
- 9,076
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 4.7MOhm
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.67mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 75V
- Height :
- 9.4mm
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 80A, 10V
- Fall Time (Typ) :
- 45 ns
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Power Dissipation-Max :
- 310W Tc
- Turn-Off Delay Time :
- 40 ns
- Avalanche Energy Rating (Eas) :
- 475 mJ
- Current Rating :
- 80A
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 310W
- Gate Charge (Qg) (Max) @ Vgs :
- 138nC @ 10V
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 18 ns
- Continuous Drain Current (ID) :
- 80A
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 88ns
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 75V
- Pbfree Code :
- yes
- Weight :
- 1.8g
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.83mm
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Datasheets
- FDP047AN08A0
FDP047AN08A0 Documents

N-Channel Tube 4.7m Ω @ 80A, 10V ±20V 6600pF @ 25V 138nC @ 10V TO-220-3
FDP047AN08A0 Description
The FDP047AN08A0 is an N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDP047AN08A0 is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit, and uninterruptible power supplies due to the following features. The FDP047AN08A0 operates within ambient temperatures from -55 to 175°C and with a power dissipation of 310W.
FDP047AN08A0 Features
-
Low Miller Charge
-
Low Qrr Body Diode
-
RDS(ON) = 4.0 m (Typ.), VGS = 10 V, ID = 80 A
-
Qg (tot) = 92 nC (Typ.), VGS = 10 V
-
UIS Capability (Single Pulse and Repetitive Pulse)
-
This Device is Pb?Free and is RoHS Compliant
FDP047AN08A0 Applications
-
Synchronous Rectification for ATX / Server / Telecom PSU
-
Battery Protection Circuit
-
Motor Drives and Uninterruptible Power Supplies
-
Communications & Networking
-
Motor Drive & Control
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