FDP038AN06A0
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- Mfr.Part #
- FDP038AN06A0
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 9 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Length :
- 10.67mm
- Power Dissipation-Max :
- 310W Tc
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 3.8mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Avalanche Energy Rating (Eas) :
- 625 mJ
- Threshold Voltage :
- 4V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 80A, 10V
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 80A Tc
- Power Dissipation :
- 310W
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Height :
- 9.65mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 17 ns
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Weight :
- 1.8g
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Mount :
- Through Hole
- Fall Time (Typ) :
- 60 ns
- Rise Time :
- 144ns
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 6400pF @ 25V
- Current Rating :
- 80A
- Continuous Drain Current (ID) :
- 80A
- Number of Terminations :
- 3
- Packaging :
- Tube
- Turn-Off Delay Time :
- 34 ns
- Width :
- 4.83mm
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Voltage - Rated DC :
- 60V
- Datasheets
- FDP038AN06A0
N-Channel Tube 3.8m Ω @ 80A, 10V ±20V 6400pF @ 25V 124nC @ 10V TO-220-3
FDP038AN06A0 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 625 mJ.A device's maximum input capacitance is 6400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 34 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
FDP038AN06A0 Features
the avalanche energy rating (Eas) is 625 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 34 ns
a threshold voltage of 4V
FDP038AN06A0 Applications
There are a lot of ON Semiconductor
FDP038AN06A0 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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