FDP036N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

37 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation :

227W

FET Type :

N-Channel

Mounting Type :

Through Hole

Length :

10.67mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

ULTRA LOW RESISTANCE

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Continuous Drain Current (ID) :

214A

Turn On Delay Time :

22 ns

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

JESD-609 Code :

e3

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Element Configuration :

Single

Lead Free :

Lead Free

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 75A, 10V

Factory Lead Time :

9 Weeks

Number of Elements :

1

Nominal Vgs :

3 V

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Height :

9.4mm

Pulsed Drain Current-Max (IDM) :

704A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

11 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rise Time :

54ns

Width :

4.83mm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Resistance :

3.6mOhm

Weight :

1.8g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Mount :

Through Hole

Power Dissipation-Max :

333W Tc

Avalanche Energy Rating (Eas) :

658 mJ

Number of Terminations :

3

Series :

PowerTrench®

Packaging :

Tube