FDP036N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

54ns

Series :

PowerTrench®

Mount :

Through Hole

Additional Feature :

ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Packaging :

Tube

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Pins :

3

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

9 Weeks

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

704A

Avalanche Energy Rating (Eas) :

658 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

1.8g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

37 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Width :

4.83mm

Pbfree Code :

yes

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

9.4mm

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation-Max :

333W Tc

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 75A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Turn On Delay Time :

22 ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

227W

Length :

10.67mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

214A

Fall Time (Typ) :

11 ns

Published :

2010

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Resistance :

3.6mOhm

Terminal Finish :

Tin (Sn)