FDMQ86530L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2010

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Manufacturer Package Identifier :

511CR

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0175Ohm

Series :

GreenBridge™ PowerTrench®

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 8A, 10V

Width :

4.5mm

Rise Time :

3.8ns

Weight :

242.3mg

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Number of Terminations :

12

FET Type :

4 N-Channel (H-Bridge)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

8A

Configuration :

COMPLEX

Drain Current-Max (Abs) (ID) :

8A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

12

Input Capacitance (Ciss) (Max) @ Vds :

2295pF @ 30V

Turn On Time-Max (ton) :

28ns

Pulsed Drain Current-Max (IDM) :

50A

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Fall Time (Typ) :

2.8 ns

Mount :

Surface Mount

Power Dissipation :

1.9W

Feedback Cap-Max (Crss) :

15 pF

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

4

Threshold Voltage :

1.8V

Turn-Off Delay Time :

22 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8.8 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

Height :

800μm

Case Connection :

DRAIN SOURCE

Package / Case :

12-WDFN Exposed Pad

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Packaging :

Digi-Reel®

Max Power Dissipation :

1.9W

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING