FDMQ8203
- Mfr.Part #
- FDMQ8203
- Manufacturer
- onsemi
- Package / Case
- 12-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2N/2P-CH 100V/80V 12-MLP
- Stock
- 12,931
- In Stock :
- 12,931
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rise Time :
- 2.8ns
- Nominal Vgs :
- 3 V
- Case Connection :
- DRAIN
- Number of Pins :
- 12
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- JESD-609 Code :
- e4
- Drain to Source Breakdown Voltage :
- -80V
- Fall Time (Typ) :
- 2.7 ns
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Transistor Application :
- SWITCHING
- Base Part Number :
- FDMQ8203
- Radiation Hardening :
- No
- Length :
- 5mm
- Threshold Voltage :
- 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Power Dissipation :
- 2.5W
- Width :
- 4.5mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 3A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 12
- FET Type :
- 2 N and 2 P-Channel (H-Bridge)
- Drain-source On Resistance-Max :
- 0.11Ohm
- ECCN Code :
- EAR99
- Weight :
- 210mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 50V
- Series :
- GreenBridge™ PowerTrench®
- Drain Current-Max (Abs) (ID) :
- 6A
- Element Configuration :
- Dual
- Transistor Element Material :
- SILICON
- Height :
- 750μm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 4
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Package / Case :
- 12-WDFN Exposed Pad
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 100V 80V
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 9 Weeks
- Pbfree Code :
- yes
- FET Feature :
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A 2.6A
- Continuous Drain Current (ID) :
- 2.6A
- Datasheets
- FDMQ8203

FDMQ8203 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMQ8203 Description
This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ8203 Features
Q1/Q4: N-Channel
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Substantial efficiency benefit in PD solutions
Q2/Q3: P-Channel
Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
RoHS Compliant
FDMQ8203 Applications
Central Office
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