FDMQ8203

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

100V 80V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

110m Ω @ 3A, 10V

JESD-609 Code :

e4

Max Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Nominal Vgs :

3 V

Drain-source On Resistance-Max :

0.11Ohm

Pbfree Code :

yes

Number of Pins :

12

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Dual

Number of Terminations :

12

Threshold Voltage :

3V

Width :

4.5mm

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current (ID) :

2.6A

Drain Current-Max (Abs) (ID) :

6A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

9 Weeks

Number of Elements :

4

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Mounting Type :

Surface Mount

Series :

GreenBridge™ PowerTrench®

Weight :

210mg

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 50V

Length :

5mm

Package / Case :

12-WDFN Exposed Pad

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-80V

Base Part Number :

FDMQ8203

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N and 2 P-Channel (H-Bridge)

Current - Continuous Drain (Id) @ 25°C :

3.4A 2.6A

Lead Free :

Lead Free

Fall Time (Typ) :

2.7 ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

2.8ns

Transistor Element Material :

SILICON

Height :

750μm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V