FDM2509NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.018Ohm

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.7A, 4.5V

Additional Feature :

ESD PROTECTED

FET Type :

2 N-Channel (Dual)

Pin Count :

6

Terminal Finish :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

NO LEAD

Package / Case :

6-WFDFN Exposed Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Power - Max :

800mW

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Series :

PowerTrench®

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

8.7A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

8.7A

Qualification Status :

COMMERCIAL

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-N6

Number of Terminations :

6

Reach Compliance Code :

Unknown

Number of Elements :

2