FDM2509NZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Package / Case :

6-WFDFN Exposed Pad

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

8.7A

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Terminal Finish :

NOT SPECIFIED

Pbfree Code :

yes

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.018Ohm

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.7A, 4.5V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

8.7A

JESD-30 Code :

R-PDSO-N6

Pin Count :

6

Reach Compliance Code :

Unknown

Additional Feature :

ESD PROTECTED

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Terminal Form :

NO LEAD

Surface Mount :

yes

FET Type :

2 N-Channel (Dual)

Power - Max :

800mW

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED