FDG8850NZ

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Mfr.Part #
FDG8850NZ
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET 2N-CH 30V 750MA SC88
Stock
169,526
In Stock :
169,526

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Dual Supply Voltage :
30V
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 10V
Packaging :
Tape and Reel (TR)
FET Feature :
Logic Level Gate
Drain Current-Max (Abs) (ID) :
0.75A
ECCN Code :
EAR99
Threshold Voltage :
1V
Rds On (Max) @ Id, Vgs :
400m Ω @ 750mA, 4.5V
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
1.44nC @ 4.5V
Continuous Drain Current (ID) :
750mA
Number of Channels :
2
Resistance :
400mOhm
Length :
2mm
Package / Case :
6-TSSOP, SC-88, SOT-363
Turn-Off Delay Time :
9 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Mount :
Surface Mount
Lead Free :
Lead Free
Element Configuration :
Dual
Width :
1.25mm
Series :
PowerTrench®
Height :
1.1mm
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
6
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
30V
Termination :
SMD/SMT
FET Type :
2 N-Channel (Dual)
Pbfree Code :
yes
Radiation Hardening :
No
Max Power Dissipation :
360mW
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transistor Element Material :
SILICON
Number of Elements :
2
Power - Max :
300mW
Number of Terminations :
6
Weight :
28mg
Turn On Delay Time :
4 ns
JESD-609 Code :
e3
Fall Time (Typ) :
1 ns
Max Junction Temperature (Tj) :
150°C
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
360mW
Factory Lead Time :
10 Weeks
Mounting Type :
Surface Mount
Published :
2007
Rise Time :
1ns
Gate to Source Voltage (Vgs) :
12V
Datasheets
FDG8850NZ
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDG8850NZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:2, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Pins:6, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDG8850NZ pinout, FDG8850NZ datasheet PDF, FDG8850NZ amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDG8850NZ ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDG8850NZ


FDG8850NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDG8850NZ           Description

 

  The dual N-channel logic level enhanced mode field effect transistor is produced by proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.

 

FDG8850NZ       Features

 

Max rDS(on) = 0.4|? at VGS = 4.5V, ID = 0.75A

Max rDS(on) = 0.5|? at VGS = 2.7V, ID = 0.67A

Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)

Very small package outline SC70-6

RoHS Compliant


FDG8850NZ              Applications

This product is general usage and suitable for many different applications.

 




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