FDG8842CZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Nominal Vgs :

1 V

Terminal Form :

Gull wing

Threshold Voltage :

1V

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

300mW

FET Type :

N and P-Channel

Current - Continuous Drain (Id) @ 25°C :

750mA 410mA

Width :

1.25mm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Length :

2mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

35 ns

REACH SVHC :

No SVHC

Fall Time (Typ) :

16 ns

Element Configuration :

Dual

Published :

2007

Drain to Source Voltage (Vdss) :

30V 25V

Height :

1mm

Gate to Source Voltage (Vgs) :

-8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

360mW

Resistance :

400mOhm

Rise Time :

16ns

Series :

PowerTrench®

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

Number of Pins :

6

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Continuous Drain Current (ID) :

750mA

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

0.75A

Termination :

SMD/SMT

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

400m Ω @ 750mA, 4.5V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 10V

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

1.44nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Number of Terminations :

6

Weight :

28mg