FDD3N40TM
- Mfr.Part #
- FDD3N40TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 2A DPAK
- Stock
- 20,133
- In Stock :
- 20,133
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Height :
- 2.39mm
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Terminations :
- 2
- Drain Current-Max (Abs) (ID) :
- 2A
- Turn-Off Delay Time :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 25V
- Width :
- 6.22mm
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 1A, 10V
- Factory Lead Time :
- 4 Weeks
- Fall Time (Typ) :
- 25 ns
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Resistance :
- 3.4Ohm
- Rise Time :
- 30ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 30W Tc
- Length :
- 6.73mm
- Additional Feature :
- FAST SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Published :
- 2013
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 8A
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Termination :
- SMD/SMT
- Power Dissipation :
- 30W
- Weight :
- 260.37mg
- REACH SVHC :
- No SVHC
- Series :
- UniFET™
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 400V
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 2A
- Threshold Voltage :
- 5V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Lead Free
- Datasheets
- FDD3N40TM

N-Channel Tape & Reel (TR) 3.4 Ω @ 1A, 10V ±30V 225pF @ 25V 6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3N40TM Description
FDD3N40TM is a 400v N-Channel UniFETTM Power MOSFET. UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. The MOSFET FDD3N40TM is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The FDD3N40TM is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDD3N40TM Features
-
RDS(on) = 3.4? ( Max.)@ VGS = 10V, ID = 1A
-
Low gate charge ( Typ. 4.5nC)
-
Low Crss ( Typ. 3.7pF)
-
100% avalanche tested
-
Drain-Source Voltage: 400v
FDD3N40TM Applications
-
LED TV
-
Consumer Appliances
-
Lighting
-
Uninterruptible Power Supply
-
Flat-panel display (FPD) TV power
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