FDD3N40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1A, 10V

Threshold Voltage :

5V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Fall Time (Typ) :

25 ns

Pulsed Drain Current-Max (IDM) :

8A

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Additional Feature :

FAST SWITCHING

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

400V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Turn On Delay Time :

10 ns

Height :

2.39mm

Power Dissipation-Max :

30W Tc

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Rise Time :

30ns

Turn-Off Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Number of Pins :

3

Pbfree Code :

yes

Resistance :

3.4Ohm

Width :

6.22mm

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Weight :

260.37mg

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

46 mJ

Continuous Drain Current (ID) :

2A

Drain Current-Max (Abs) (ID) :

2A

Terminal Form :

Gull wing

Length :

6.73mm

Number of Elements :

1

JESD-609 Code :

e3

Radiation Hardening :

No

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

30W

Series :

UniFET™