FDD3860
- Mfr.Part #
- FDD3860
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.2A DPAK
- Stock
- 1,458
- In Stock :
- 1,458
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 24 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 260.37mg
- Fall Time (Typ) :
- 7 ns
- Power Dissipation :
- 3.1W
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 6.2A
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.73mm
- Number of Pins :
- 3
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Height :
- 2.39mm
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 42A
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Width :
- 6.22mm
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power Dissipation-Max :
- 3.1W Ta 69W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 5.9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1740pF @ 50V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Resistance :
- 36mOhm
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- REACH SVHC :
- No SVHC
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 16 ns
- ECCN Code :
- EAR99
- Threshold Voltage :
- 3.8V
- Rise Time :
- 10ns
- Datasheets
- FDD3860

N-Channel Tape & Reel (TR) 36m Ω @ 5.9A, 10V ±20V 1740pF @ 50V 31nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
The FDD3860 is a 100V N-Channel PowerTrench MOSFET Using Fairchild's proprietary high density trench MOSFET process. This N-Channel MOSFET is rugged gate version of ON Semiconductor’s advanced Power Trench? process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
FDD3860 Features
● Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
● High Performance Trench Technology for Extremely Low rDS(on)
● 100% UIL Tested
● RoHS Compliant
● Lead Free
● No SVHC
FDD3860 Applications
● DC-AC Conversion
● Synchronous Rectifier
● Switching applications
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