FDD3682-F085
- Mfr.Part #
- FDD3682-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.5/32A TO252AA
- Stock
- 41,787
- In Stock :
- 41,787
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-252AA
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 5.5A
- Turn On Delay Time :
- 9 ns
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Weight :
- 260.37mg
- Power Dissipation :
- 95W
- Turn-Off Delay Time :
- 24 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 95W Tc
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 25V
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 32A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta 32A Tc
- Radiation Hardening :
- No
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Fall Time (Typ) :
- 26 ns
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 46ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Published :
- 2017
- Datasheets
- FDD3682-F085

N-Channel Tape & Reel (TR) 36m Ω @ 32A, 10V ±20V 1250pF @ 25V 28nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3682-F085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 55 mJ.A device's maximal input capacitance is 1250pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (6V 10V).
FDD3682-F085 Features
the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 24 ns
FDD3682-F085 Applications
There are a lot of ON Semiconductor
FDD3682-F085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDD300003 | onsemi | 39,984 | XTAL OSC XO SMD |
| FDD300004 | onsemi | 16,067 | XTAL OSC XO 133.0000MHZ CMOS SMD |
| FDD306P | onsemi | 19,689 | MOSFET P-CH 12V 6.7A TO252 |
| FDD330003 | onsemi | 15,429 | XTAL OSC XO 133.3300MHZ CMOS SMD |
| FDD330005 | onsemi | 36,180 | XTAL OSC SEAM5032 SMD |
| FDD3510H | onsemi | 12,746 | MOSFET N/P-CH 80V 4.3/2.8A TO252 |
| FDD3570 | onsemi | 1 | MOSFET N-CH 80V 10A TO252 |
| FDD3570 | onsemi | 1 | MOSFET N-CH 80V 10A TO252 |
| FDD3580 | onsemi | 8,500 | MOSFET N-CH 80V 7.7A DPAK |
| FDD3580 | onsemi | 2,219 | MOSFET N-CH 80V 7.7A D-PAK |
| FDD3670 | onsemi | 16,160 | MOSFET N-CH 100V 34A TO252 |
| FDD3670 | onsemi | 20,478 | POWER FIELD-EFFECT TRANSISTOR, 3 |
| FDD3672 | onsemi | 6,615 | MOSFET N-CH 100V 6.5/44A TO252AA |
| FDD3672-F085 | onsemi | 165,846 | MOSFET N-CH 100V 44A TO252AA |
| FDD3672-F085 | onsemi | 165,846 | FDD3672 - N-CHANNEL ULTRAFET TRE |
















