FDD3680

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Mfr.Part #
FDD3680
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 25A TO252
Stock
2,060
In Stock :
2,060

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Weight :
260.37mg
Continuous Drain Current (ID) :
25A
Input Capacitance (Ciss) (Max) @ Vds :
1735pF @ 50V
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
245 mJ
Gate to Source Voltage (Vgs) :
20V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Mounting Type :
Surface Mount
Factory Lead Time :
8 Weeks
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
46m Ω @ 6.1A, 10V
Turn-Off Delay Time :
63 ns
Current Rating :
25A
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
68W Ta
Resistance :
46mOhm
Vgs(th) (Max) @ Id :
4V @ 250µA
Rise Time :
8.5ns
Radiation Hardening :
No
Operating Temperature :
-55°C~175°C TJ
Voltage - Rated DC :
100V
Drain Current-Max (Abs) (ID) :
26A
JESD-609 Code :
e3
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Number of Elements :
1
Lead Free :
Lead Free
Power Dissipation :
68W
Current - Continuous Drain (Id) @ 25°C :
25A Ta
Transistor Element Material :
SILICON
Number of Terminations :
2
Mount :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Terminal Form :
Gull wing
Series :
PowerTrench®
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
21 ns
Terminal Finish :
Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Number of Pins :
3
Turn On Delay Time :
14 ns
Packaging :
Tape and Reel (TR)
Datasheets
FDD3680
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD3680 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, FDD3680 pinout, FDD3680 datasheet PDF, FDD3680 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD3680 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD3680


N-Channel Tape & Reel (TR) 46m Ω @ 6.1A, 10V ±20V 1735pF @ 50V 53nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD3680 Description

The FDD3680 N-Channel MOSFET has been designed with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. These FDD3680 MOSFETs have a lower gate charge and faster switching than MOSFETs with comparable RDS(ON) parameters. As a result, driving the FDD3680 MOSFET is easier and safer (even at very high frequencies), and DC/DC power supply systems are more efficient overall.



FDD3680 Features

25 A, 100 V.
RDS(ON) = 46 mΩ @ VGS = 10 V
RDS(ON) = 51 mΩ @ VGS = 6 V
Low gate charge (38 nC typical)
Fast switching speed
High performance trench technology for extremely RDS(ON)
High power and current handling capability


FDD3680 Applications

FDD3680 is employed as voltage-variable resistors (WRs) in operational amplifiers (op-amps), tone controls, and logic circuits, as well as for mixer operation on FM and TV receivers.
High-speed power switching
Low drive current
Suitable for motor control, switching regulator and DC-DC converter
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