FDC3601N
- Mfr.Part #
- FDC3601N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 100V 1A SSOT-6
- Stock
- 79,788
- In Stock :
- 79,788
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power Dissipation :
- 960mW
- ECCN Code :
- EAR99
- Weight :
- 36mg
- Number of Pins :
- 6
- Length :
- 3mm
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Rise Time :
- 4ns
- Terminal Finish :
- Tin (Sn)
- Height :
- 1mm
- Turn On Delay Time :
- 8 ns
- Current Rating :
- 1A
- Threshold Voltage :
- 2.6V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 5 Weeks
- FET Feature :
- Standard
- Terminal Form :
- Gull wing
- Number of Terminations :
- 6
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 500MOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 153pF @ 50V
- Lead Free :
- Lead Free
- Power - Max :
- 700mW
- Turn-Off Delay Time :
- 11 ns
- Width :
- 1.7mm
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- 2 N-Channel (Dual)
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 4 ns
- Number of Elements :
- 2
- Drain Current-Max (Abs) (ID) :
- 1A
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 1A, 10V
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 960mW
- Datasheets
- FDC3601N
FDC3601N Documents

FDC3601N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC3601N Description
These N-channel 100V MOSFET are manufactured using an advanced PowerTrack process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.
FDC3601N Features
1.0 A, 100 V
RDS(on) = 500 m|?@ VGS = 10 V
RDS(on) = 550 m|? @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT?-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)
FDC3601N Applications
This product is general usage and suitable for many different applications.
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