FDC3601N

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Mfr.Part #
FDC3601N
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET 2N-CH 100V 1A SSOT-6
Stock
79,788
In Stock :
79,788

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Voltage - Rated DC :
100V
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
JESD-609 Code :
e3
Number of Terminations :
6
Mounting Type :
Surface Mount
Current Rating :
1A
Rds On (Max) @ Id, Vgs :
500m Ω @ 1A, 10V
Operating Mode :
ENHANCEMENT MODE
Rise Time :
4ns
FET Feature :
Standard
Height :
1mm
Turn-Off Delay Time :
11 ns
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Width :
1.7mm
Element Configuration :
Dual
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 10V
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
153pF @ 50V
ECCN Code :
EAR99
Number of Pins :
6
FET Type :
2 N-Channel (Dual)
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Elements :
2
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Fall Time (Typ) :
4 ns
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
5 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Transistor Element Material :
SILICON
Series :
PowerTrench®
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
1A
Resistance :
500MOhm
Drain to Source Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
2.6V
Mount :
Surface Mount
Turn On Delay Time :
8 ns
Length :
3mm
Weight :
36mg
Power Dissipation :
960mW
Continuous Drain Current (ID) :
1A
Power - Max :
700mW
Max Power Dissipation :
960mW
Terminal Finish :
Tin (Sn)
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDC3601N from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Mounting Type:Surface Mount, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-23-6 Thin, TSOT-23-6, FDC3601N pinout, FDC3601N datasheet PDF, FDC3601N amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDC3601N ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC3601N


FDC3601N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDC3601N      Description


These N-channel 100V MOSFET are manufactured using an advanced PowerTrack process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.

 

FDC3601N       Features

 

1.0 A, 100 V

RDS(on) = 500 m|?@ VGS = 10 V

RDS(on) = 550 m|? @ VGS = 6 V

Low gate charge (3.7nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT?-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)


FDC3601N             Applications


This product is general usage and suitable for many different applications.

 





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