FDC3601N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain Current-Max (Abs) (ID) :

1A

Rise Time :

4ns

Current Rating :

1A

Gate to Source Voltage (Vgs) :

20V

Length :

3mm

Drain to Source Breakdown Voltage :

100V

FET Feature :

Standard

Width :

1.7mm

Rds On (Max) @ Id, Vgs :

500m Ω @ 1A, 10V

Resistance :

500MOhm

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 50V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

11 ns

Turn On Delay Time :

8 ns

Number of Terminations :

6

REACH SVHC :

No SVHC

Number of Elements :

2

Transistor Application :

SWITCHING

Factory Lead Time :

5 Weeks

Continuous Drain Current (ID) :

1A

Pbfree Code :

yes

Power - Max :

700mW

Radiation Hardening :

No

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Height :

1mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Threshold Voltage :

2.6V

Fall Time (Typ) :

4 ns

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Voltage - Rated DC :

100V

Power Dissipation :

960mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

960mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PowerTrench®

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Weight :

36mg

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Transistor Element Material :

SILICON