FDC365P
- Mfr.Part #
- FDC365P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 35V 4.3A SUPERSOT6
- Stock
- 130
- In Stock :
- 130
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 3 ns
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.6W Ta
- Max Junction Temperature (Tj) :
- 150°C
- Drain to Source Voltage (Vdss) :
- 35V
- Power Dissipation :
- 800mW
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 15 ns
- Number of Channels :
- 1
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 3ns
- Resistance :
- 55mOhm
- Width :
- 1.7mm
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 705pF @ 20V
- FET Type :
- P-Channel
- Series :
- PowerTrench®
- Drain to Source Breakdown Voltage :
- -35V
- Continuous Drain Current (ID) :
- -4.3A
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 13 Weeks
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 4.2A, 10V
- Published :
- 2006
- Number of Terminations :
- 6
- Turn On Delay Time :
- 7 ns
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Threshold Voltage :
- -1.8V
- Weight :
- 36mg
- Number of Pins :
- 6
- Length :
- 3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Feedback Cap-Max (Crss) :
- 80 pF
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Ta
- Datasheets
- FDC365P

P-Channel Tape & Reel (TR) 55m Ω @ 4.2A, 10V ±20V 705pF @ 20V 15nC @ 10V 35V SOT-23-6 Thin, TSOT-23-6
FDC365P Description
FDC365P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench? technology to deliver low IDs(on) and optimized Bvdss capability to offer superior performance benefits in the applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDC365P is in the SSOT-6 package with 1.6W power dissipation.
FDC365P Features
-
Max rDS(on) = 55mΩ at VGS = 10V, ID = -4.2A
-
Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
-
RoHS compliant
-
Drain to Source Voltage: -35v
-
Gate to Source Voltage: ±20v
FDC365P Applications
-
Inverter
-
Power Supplies
-
Computers
-
Electric Vehicles
-
Welding
-
Aircraft
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