FDC365P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

15 ns

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

36mg

Number of Elements :

1

Number of Channels :

1

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-4.3A

Threshold Voltage :

-1.8V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.2A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Length :

3mm

Vgs (Max) :

±20V

Number of Terminations :

6

Element Configuration :

Single

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

Mount :

Surface Mount

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

JESD-609 Code :

e3

Power Dissipation-Max :

1.6W Ta

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Fall Time (Typ) :

3 ns

Packaging :

Tape and Reel (TR)

Rise Time :

3ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

80 pF

Width :

1.7mm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Published :

2006

Resistance :

55mOhm

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 20V

Power Dissipation :

800mW

Drain to Source Voltage (Vdss) :

35V

Drain to Source Breakdown Voltage :

-35V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Height :

1.1mm

Transistor Element Material :

SILICON