FDC365P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Factory Lead Time :

13 Weeks

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-4.3A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

15 ns

Terminal Form :

Gull wing

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rise Time :

3ns

Drain to Source Voltage (Vdss) :

35V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.6W Ta

Height :

1.1mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

6

Drain to Source Breakdown Voltage :

-35V

Series :

PowerTrench®

Turn On Delay Time :

7 ns

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

800mW

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.2A, 10V

Number of Terminations :

6

Threshold Voltage :

-1.8V

Vgs (Max) :

±20V

Resistance :

55mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Published :

2006

Fall Time (Typ) :

3 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Width :

1.7mm

ECCN Code :

EAR99

Weight :

36mg

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 20V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Length :

3mm

Element Configuration :

Single

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Feedback Cap-Max (Crss) :

80 pF

Radiation Hardening :

No