FDC3535

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Published :

2017

Radiation Hardening :

No

Terminal Finish :

Tin

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

-80V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Vgs (Max) :

±20V

Power Dissipation-Max :

1.6W Ta

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Feedback Cap-Max (Crss) :

40 pF

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Turn On Delay Time :

6.5 ns

Weight :

36mg

Transistor Application :

SWITCHING

Series :

PowerTrench®

Length :

3mm

Width :

1.7mm

Threshold Voltage :

-1.6V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation :

1.6W

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

2.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 40V

Height :

1.1mm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Number of Channels :

1

Number of Elements :

1

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

-1.6 V

Mount :

Surface Mount

Rise Time :

3.1ns

Number of Terminations :

6

Continuous Drain Current (ID) :

-2.1A

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

183m Ω @ 2.1A, 10V

Drain to Source Voltage (Vdss) :

80V

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Turn-Off Delay Time :

23 ns

Gate to Source Voltage (Vgs) :

20V