FDC3535
- Mfr.Part #
- FDC3535
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 80V 2.1A SUPERSOT6
- Stock
- 65,883
- In Stock :
- 65,883
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- -1.6 V
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 2.9 ns
- FET Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Threshold Voltage :
- -1.6V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 1.6W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- REACH SVHC :
- No SVHC
- Published :
- 2017
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Feedback Cap-Max (Crss) :
- 40 pF
- Number of Terminations :
- 6
- Turn On Delay Time :
- 6.5 ns
- Length :
- 3mm
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.1mm
- Weight :
- 36mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Ta
- Power Dissipation :
- 1.6W
- Rds On (Max) @ Id, Vgs :
- 183m Ω @ 2.1A, 10V
- Width :
- 1.7mm
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Series :
- PowerTrench®
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- -2.1A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 80V
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin
- Drain to Source Breakdown Voltage :
- -80V
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 40V
- Rise Time :
- 3.1ns
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 23 ns
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDC3535

P-Channel Tape & Reel (TR) 183m Ω @ 2.1A, 10V ±20V 880pF @ 40V 20nC @ 10V 80V SOT-23-6 Thin, TSOT-23-6
FDC3535 MOSFET Description
This P-Channel MOSFET FDC3535 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The FDC3535 has a maximum on-resistance of 233 mΩ (VGS @-4.5 V) and its nominal Gate-Source Voltage is ±20V.
FDC3535 MOSFET Features
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC3535 MOSFET Applications
IGBTs and MOSFETs
Inductors
Bridge Configurations
Synchronous Rectifiers
AC Motor Speed Control
Switched Reluctance Motor Drivers
High-side P-Channel Devices
Dual Forward Converters
Current Control
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