FDC3512

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Height :

1mm

Mount :

Surface Mount

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

3A

HTS Code :

8541.29.00.95

Resistance :

77mOhm

Transistor Element Material :

SILICON

Voltage - Rated DC :

80V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Published :

2002

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

634pF @ 40V

Lead Free :

Lead Free

Fall Time (Typ) :

3 ns

Radiation Hardening :

No

JESD-609 Code :

e3

ECCN Code :

EAR99

Width :

1.7mm

Nominal Vgs :

2.4 V

Power Dissipation :

1.6W

Rise Time :

3ns

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Current Rating :

3A

Turn On Delay Time :

7 ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

77m Ω @ 3A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Threshold Voltage :

2.4V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Length :

3mm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs (Max) :

±20V

Pbfree Code :

yes

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

24 ns

Drain to Source Breakdown Voltage :

80V

Weight :

36mg

Power Dissipation-Max :

1.6W Ta