FCH077N65F-F155
- Mfr.Part #
- FCH077N65F-F155
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 54A TO247
- Stock
- 3,440
- In Stock :
- 3,440
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- JEDEC-95 Code :
- TO-247AB
- Rds On (Max) @ Id, Vgs :
- 77m Ω @ 27A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 481W Tc
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 54A Tc
- Fall Time (Typ) :
- 5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 164nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7109pF @ 100V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Rise Time :
- 35ns
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 54A
- Turn On Delay Time :
- 40 ns
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Resistance :
- 77mOhm
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 5V @ 5.4mA
- Series :
- FRFET®, SuperFET® II
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 6.39g
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 113 ns
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- FCH077N65F-F155

N-Channel Tube 77m Ω @ 27A, 10V ±20V 7109pF @ 100V 164nC @ 10V TO-247-3
FCH077N65F-F155 Overview
A device's maximum input capacitance is 7109pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 54A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 113 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FCH077N65F-F155 Features
a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 113 ns
FCH077N65F-F155 Applications
There are a lot of ON Semiconductor
FCH077N65F-F155 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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