FCH041N65EFL4

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Mfr.Part #
FCH041N65EFL4
Manufacturer
Fairchild Semiconductor
Package / Case
TO-247-4
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, N
Stock
2,041
In Stock :
2,041

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-247-4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Element Configuration :
Single
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 7.6mA
Input Capacitance (Ciss) (Max) @ Vds :
12560pF @ 100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
298nC @ 10V
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
595W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Series :
FRFET®, SuperFET® II
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
12 Weeks
Weight :
6.289g
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
41m Ω @ 38A, 10V
HTS Code :
8541.29.00.95
Drain to Source Voltage (Vdss) :
650V
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
JESD-609 Code :
e3
Continuous Drain Current (ID) :
76A
Datasheets
FCH041N65EFL4
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FCH041N65EFL4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-4, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FCH041N65EFL4 pinout, FCH041N65EFL4 datasheet PDF, FCH041N65EFL4 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FCH041N65EFL4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FCH041N65EFL4


N-Channel Tube 41m Ω @ 38A, 10V ±20V 12560pF @ 100V 298nC @ 10V 650V TO-247-4

FCH041N65EFL4 Description


SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SuperFET II FRFET? MOSFET’s optimized body diode reverse recovery performance can remove the additional component and improve system reliability.



FCH041N65EFL4 Features


  • RoHS Compliant

  • 700 V @ TJ = 150°C

  • Typ. RDS(on) = 36 mΩ

  • 100% Avalanche Tested

  • Ultra Low Gate Charge (Typ. Qg = 229 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)



FCH041N65EFL4 Applications


  • Solar inverter

  • LCD/LED/PDP TV 

  • AC-DC Power Supplies

  • Telecom/Server/Power Supplies


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