FCH041N65EFL4
- Mfr.Part #
- FCH041N65EFL4
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, N
- Stock
- 2,041
- In Stock :
- 2,041
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 7.6mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 12560pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 298nC @ 10V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 595W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Series :
- FRFET®, SuperFET® II
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Weight :
- 6.289g
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 38A, 10V
- HTS Code :
- 8541.29.00.95
- Drain to Source Voltage (Vdss) :
- 650V
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 76A
- Datasheets
- FCH041N65EFL4

N-Channel Tube 41m Ω @ 38A, 10V ±20V 12560pF @ 100V 298nC @ 10V 650V TO-247-4
FCH041N65EFL4 Description
SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SuperFET II FRFET? MOSFET’s optimized body diode reverse recovery performance can remove the additional component and improve system reliability.
FCH041N65EFL4 Features
-
RoHS Compliant
-
700 V @ TJ = 150°C
-
Typ. RDS(on) = 36 mΩ
-
100% Avalanche Tested
-
Ultra Low Gate Charge (Typ. Qg = 229 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
FCH041N65EFL4 Applications
-
Solar inverter
-
LCD/LED/PDP TV
-
AC-DC Power Supplies
-
Telecom/Server/Power Supplies
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