FCH041N60E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Published :

2013

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Number of Pins :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

41m Ω @ 39A, 10V

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Weight :

6.39g

Element Configuration :

Single

Length :

15.87mm

Series :

SuperFET® II

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Fall Time (Typ) :

85 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Width :

4.82mm

Turn-Off Delay Time :

320 ns

Height :

20.82mm

Pbfree Code :

yes

Mount :

Through Hole

Power Dissipation :

592W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

592W Tc

ECCN Code :

EAR99

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

77A

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

50 ns

Factory Lead Time :

12 Weeks

Rise Time :

50ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V