FCH041N65EFL4
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- Mfr.Part #
- FCH041N65EFL4
- Manufacturer
- onsemi
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 76A TO247
- Stock
- 2,041
- In Stock ：
- 2,041
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 7.6mA
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 38A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- FRFET®, SuperFET® II
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 76A
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 298nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 12560pF @ 100V
- Drain to Source Voltage (Vdss) :
- 650V
- FET Type :
- N-Channel
- Weight :
- 6.289g
- HTS Code :
- 8541.29.00.95
- Power Dissipation-Max :
- 595W Tc
- Package / Case :
- TO-247-4
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Datasheets
- FCH041N65EFL4
N-Channel Tube 41m Ω @ 38A, 10V ±20V 12560pF @ 100V 298nC @ 10V 650V TO-247-4
FCH041N65EFL4 Description
SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SuperFET II FRFET? MOSFET’s optimized body diode reverse recovery performance can remove the additional component and improve system reliability.
FCH041N65EFL4 Features
-
RoHS Compliant
-
700 V @ TJ = 150°C
-
Typ. RDS(on) = 36 mΩ
-
100% Avalanche Tested
-
Ultra Low Gate Charge (Typ. Qg = 229 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
FCH041N65EFL4 Applications
-
Solar inverter
-
LCD/LED/PDP TV
-
AC-DC Power Supplies
-
Telecom/Server/Power Supplies
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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