FCH041N60F
- Mfr.Part #
- FCH041N60F
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 76A TO247-3
- Stock
- 8,286
- In Stock :
- 8,286
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 244 ns
- Contact Plating :
- Tin
- Width :
- 4.82mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Weight :
- 6.39g
- Fall Time (Typ) :
- 53 ns
- Drain to Source Breakdown Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Number of Terminations :
- 3
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Series :
- SuperFET® II
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 38A, 10V
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 14365pF @ 100V
- Rise Time :
- 66ns
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 228A
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 595W Tc
- Power Dissipation :
- 595W
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn On Delay Time :
- 63 ns
- Length :
- 15.87mm
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 2025 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Height :
- 20.82mm
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 76A
- JEDEC-95 Code :
- TO-247AB
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Datasheets
- FCH041N60F

N-Channel Tube 41m Ω @ 38A, 10V ±20V 14365pF @ 100V 360nC @ 10V TO-247-3
FCH041N60F Description
The FCH041N60F MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve exceptional low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the FCH041N60F MOSFET is ideal for switching power applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of the FCH041N60F MOSFET can eliminate a component and improve system reliability.
FCH041N60F Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 36 m
-
Ultra Low Gate Charge (Typ. Qg = 277 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH041N60F Applications
-
Telecom / Server Power Supplies
-
Industrial Power Supplies
-
EV Charger
-
UPS / Solar
-
AC-DC Merchant Power Supply
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Energy Generation & Distribution
-
External AC-DC Merchant Power Supply - Data Processing
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