FCH041N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

228A

Fall Time (Typ) :

53 ns

Power Dissipation :

595W

Mount :

Through Hole

Width :

4.82mm

Contact Plating :

Tin

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Height :

20.82mm

Number of Elements :

1

Element Configuration :

Single

Turn On Delay Time :

63 ns

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Number of Pins :

3

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Factory Lead Time :

15 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Rise Time :

66ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

244 ns

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2025 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperFET® II

Rds On (Max) @ Id, Vgs :

41m Ω @ 38A, 10V

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

595W Tc

ECCN Code :

EAR99

Weight :

6.39g

Transistor Element Material :

SILICON

Published :

2013

Continuous Drain Current (ID) :

76A

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-247AB

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

14365pF @ 100V

RoHS Status :

ROHS3 Compliant

Length :

15.87mm