FCH072N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

481W Tc

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

140 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

52A

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

20.82mm

Radiation Hardening :

No

JESD-609 Code :

e3

Mount :

Through Hole

Number of Elements :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

72m Ω @ 26A, 10V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

156A

Series :

FRFET®, SuperFET® II

Number of Pins :

3

JEDEC-95 Code :

TO-247AB

Number of Terminations :

3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1128 mJ

Weight :

6.39g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.072Ohm

Turn On Delay Time :

43 ns

Width :

4.82mm

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Power Dissipation :

481W

Published :

2013

Rise Time :

38ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

8660pF @ 100V

Fall Time (Typ) :

25 ns

Factory Lead Time :

12 Weeks

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Length :

15.87mm

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)