FCH070N60E

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Mfr.Part #
FCH070N60E
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 52A TO247
Stock
68
In Stock :
68

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-247-3
Weight :
6.39g
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
166nC @ 10V
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
HTS Code :
8541.29.00.95
ECCN Code :
EAR99
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
4925pF @ 380V
Power Dissipation-Max :
481W Tc
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Reach Compliance Code :
not_compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Continuous Drain Current (ID) :
52A
Series :
SuperFET® II
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
12 Weeks
Rds On (Max) @ Id, Vgs :
70m Ω @ 26A, 10V
Drain to Source Voltage (Vdss) :
600V
JESD-609 Code :
e3
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH070N60E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FCH070N60E pinout, FCH070N60E datasheet PDF, FCH070N60E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH070N60E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH070N60E


N-Channel Tube 70m Ω @ 26A, 10V ±20V 4925pF @ 380V 166nC @ 10V 600V TO-247-3

FCH070N60E Description


The SUPERFET II MOSFET is a brand new high voltage super junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, when compared to the SUPERFET II MOSFET series, the SUPERFET II MOSFET easy drive series has slightly slower rise and fall times. This family, denoted by the "E" component number suffix, aids in the management of EMI concerns and facilitates design implementation. Consider the SUPERFET II MOSFET series for faster switching in applications where switching losses must be kept to a minimum.



FCH070N60E Features


  • Typ. RDS(on) = 58 m

  • 650 V @ TJ = 150°C

  • 100% Avalanche Tested

  • Ultra Low Gate Charge (Typ. Qg = 128 nC)

  • These Devices are Pb?Free and are RoHS Compliant

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF)



FCH070N60E Applications


  • Industrial Power Supplies

  • Telecom / Server Power Supplies


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