FCH043N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Through Hole

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AB

Number of Terminations :

3

Packaging :

Tube

Number of Pins :

3

Turn On Delay Time :

46 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

12225pF @ 400V

Rds On (Max) @ Id, Vgs :

43m Ω @ 38A, 10V

DS Breakdown Voltage-Min :

600V

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Width :

4.82mm

Pulsed Drain Current-Max (IDM) :

225A

Factory Lead Time :

12 Weeks

Rise Time :

36ns

Transistor Application :

SWITCHING

Height :

20.82mm

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

592W Tc

Vgs (Max) :

±20V

Number of Channels :

1

Published :

2014

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Mode :

ENHANCEMENT MODE

Weight :

6.39g

Reach Compliance Code :

not_compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperFET® II

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Fall Time (Typ) :

6 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

75A

Length :

15.87mm

JESD-609 Code :

e3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

2025 mJ

Turn-Off Delay Time :

162 ns

Transistor Element Material :

SILICON