FCH043N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

12225pF @ 400V

Rise Time :

36ns

Published :

2014

Number of Pins :

3

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Application :

SWITCHING

Weight :

6.39g

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

2025 mJ

ECCN Code :

EAR99

Turn-Off Delay Time :

162 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation-Max :

592W Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AB

Continuous Drain Current (ID) :

75A

Series :

SuperFET® II

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

43m Ω @ 38A, 10V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Mount :

Through Hole

Width :

4.82mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Element Configuration :

Single

Length :

15.87mm

DS Breakdown Voltage-Min :

600V

Height :

20.82mm

Pulsed Drain Current-Max (IDM) :

225A

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Fall Time (Typ) :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Turn On Delay Time :

46 ns

Terminal Finish :

Tin (Sn)