FCA22N60N

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Mfr.Part #
FCA22N60N
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO3PN
Stock
1,438
In Stock :
1,438

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Resistance :
165mOhm
Width :
5mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
4 ns
Transistor Element Material :
SILICON
Length :
15.8mm
Drain to Source Voltage (Vdss) :
600V
Number of Elements :
1
Element Configuration :
Single
ECCN Code :
EAR99
Mounting Type :
Through Hole
Series :
SupreMOS™
Turn On Delay Time :
16.9 ns
Threshold Voltage :
3V
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 100V
Drain to Source Breakdown Voltage :
650V
Power Dissipation :
205W
Pbfree Code :
yes
Factory Lead Time :
12 Weeks
Number of Pins :
3
Radiation Hardening :
No
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Vgs (Max) :
±30V
Turn-Off Delay Time :
49 ns
FET Type :
N-Channel
REACH SVHC :
No SVHC
Published :
2009
Contact Plating :
Tin
Pulsed Drain Current-Max (IDM) :
66A
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Rise Time :
16.7s
Mount :
Through Hole
Power Dissipation-Max :
205W Tc
Package / Case :
TO-3P-3, SC-65-3
Case Connection :
DRAIN
Lead Free :
Lead Free
Nominal Vgs :
3 V
JESD-609 Code :
e3
Continuous Drain Current (ID) :
22A
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Avalanche Energy Rating (Eas) :
672 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Rds On (Max) @ Id, Vgs :
165m Ω @ 11A, 10V
Height :
20.1mm
Transistor Application :
SWITCHING
Weight :
6.401g
Gate to Source Voltage (Vgs) :
30V
Introducing Transistors - FETs, MOSFETs - Single onsemi FCA22N60N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, FCA22N60N pinout, FCA22N60N datasheet PDF, FCA22N60N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCA22N60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCA22N60N


N-Channel Tube 165m Ω @ 11A, 10V ±30V 1950pF @ 100V 45nC @ 10V 600V TO-3P-3, SC-65-3

FCA22N60N Description


The SupreMOS? MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCA22N60N Features


? BVDSS = 650V @ TJ = 150°C
? RDS(on) = 140m? ( Typ.) @ VGS = 10V, ID = 11A
? Ultra low gate charge ( Typ. Qg = 45nC )
? Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
? 100% avalanche tested
? RoHS compliant

FCA22N60N Applications


? ATX Power
? FPD TV power
? Server / Telecom Power
? Power Factor Correction
? Industrial Power Applications
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