FCA22N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

165mOhm

Width :

5mm

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

672 mJ

Transistor Application :

SWITCHING

Mount :

Through Hole

Length :

15.8mm

Pulsed Drain Current-Max (IDM) :

66A

Rise Time :

16.7s

Pbfree Code :

yes

Turn On Delay Time :

16.9 ns

Weight :

6.401g

Fall Time (Typ) :

4 ns

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

165m Ω @ 11A, 10V

Series :

SupreMOS™

RoHS Status :

ROHS3 Compliant

Height :

20.1mm

Turn-Off Delay Time :

49 ns

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-3P-3, SC-65-3

JESD-609 Code :

e3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

650V

Nominal Vgs :

3 V

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Number of Pins :

3

Number of Elements :

1

Continuous Drain Current (ID) :

22A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation-Max :

205W Tc

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Power Dissipation :

205W