FCA22N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Published :

2009

Length :

15.8mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Weight :

6.401g

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Pulsed Drain Current-Max (IDM) :

66A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Fall Time (Typ) :

4 ns

Nominal Vgs :

3 V

REACH SVHC :

No SVHC

Width :

5mm

Avalanche Energy Rating (Eas) :

672 mJ

Packaging :

Tube

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Power Dissipation :

205W

Drain to Source Breakdown Voltage :

650V

Turn-Off Delay Time :

49 ns

Rds On (Max) @ Id, Vgs :

165m Ω @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Mounting Type :

Through Hole

Pbfree Code :

yes

Package / Case :

TO-3P-3, SC-65-3

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Resistance :

165mOhm

Vgs (Max) :

±30V

Power Dissipation-Max :

205W Tc

JESD-609 Code :

e3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Number of Elements :

1

Rise Time :

16.7s

Transistor Application :

SWITCHING

Series :

SupreMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Turn On Delay Time :

16.9 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Height :

20.1mm

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Continuous Drain Current (ID) :

22A

Radiation Hardening :

No