FCA20N60-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Rise Time :

140ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

JESD-609 Code :

e3

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Continuous Drain Current (ID) :

20A

Series :

SuperFET™

Pbfree Code :

yes

Base Part Number :

FCA20N60

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Fall Time (Typ) :

65 ns

Number of Elements :

1

Weight :

6.401g

Turn-Off Delay Time :

230 ns

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Turn On Delay Time :

62 ns

Number of Pins :

3

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

690 mJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Lead Free :

Lead Free

Resistance :

190mOhm

Packaging :

Tube

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

208W Tc

FET Type :

N-Channel

Radiation Hardening :

No

Number of Terminations :

3

Power Dissipation :

208W