FCA20N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Weight :

6.401g

Width :

5mm

Package / Case :

TO-3P-3, SC-65-3

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Number of Elements :

1

Height :

20.1mm

Number of Terminations :

3

Transistor Application :

SWITCHING

Base Part Number :

FCA20N60

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

208W

Turn-Off Delay Time :

230 ns

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

60A

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

690 mJ

Mount :

Through Hole

Number of Pins :

3

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

65 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

20A

Length :

16.2mm

Power Dissipation-Max :

208W Tc

Series :

SuperFET™

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2013

Rise Time :

140ns

Mounting Type :

Through Hole

Element Configuration :

Single

ECCN Code :

EAR99

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

62 ns

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel