FCA20N60
- Mfr.Part #
- FCA20N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- 20A, 600V, 0.19OHM, N-CHANNEL,
- Stock
- 4,567
- In Stock :
- 4,567
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 230 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Height :
- 20.1mm
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 20A
- Width :
- 5mm
- Length :
- 16.2mm
- Packaging :
- Tube
- Published :
- 2013
- Qualification Status :
- Not Qualified
- Series :
- SuperFET™
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Weight :
- 6.401g
- Package / Case :
- TO-3P-3, SC-65-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 208W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FCA20N60
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 60A
- Rise Time :
- 140ns
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 208W
- Input Capacitance (Ciss) (Max) @ Vds :
- 3080pF @ 25V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 65 ns
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 62 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Datasheets
- FCA20N60
FCA20N60 Documents

N-Channel Tube 190m Ω @ 10A, 10V ±30V 3080pF @ 25V 98nC @ 10V TO-3P-3, SC-65-3
Description
The FCA20N60F is a 600 V, 20 A, 190 m N-Channel SuperFET? FRFET? MOSFET. Fairchild Semiconductor's SuperFET? MOSFET family is the first generation of high voltage super-junction (SJ) MOSFETs that use charge balance technology for remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET MOSFETs are well suited to switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFET FRFET? MOSFETs can eliminate extraneous components and improve system reliability.
Features
? Ultra Low Gate Charge (Typ. Qg = 75 nC )
? Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
? 100% Avalanche Tested
? RoHS Compliant
? 650 V @ TJ = 150°C
? Typ. RDS(on) = 150 m?
? Fast Recovery Type (Typ. Trr = 160 ns )
Applications
? LCD / LED / PDP TV
? Solar Inverter
? AC-DC Power Supply
? Automotive electronics
? Switching devices
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